DocumentCode :
1957152
Title :
Effect of plasma-induced charging damage on n-channel and p-channel MOSFET hot carrier reliability
Author :
Mistry, Kaizad R. ; Fishbein, Bruce J. ; Doyle, Brian S.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fYear :
1994
fDate :
11-14 April 1994
Firstpage :
42
Lastpage :
47
Abstract :
We have investigated the impact of plasma-induced charging damage on the hot carrier reliability of n- and p-MOSFET´s, including the examination of different stress bias regimes and the statistical distributions of hot carrier failure times. We found that when electron trapping determines hot carrier failure-as in p-MOSFETs stressed under the peak gate current condition-the median time-to-fail was dramatically reduced while the dispersion in the failure data was increased as plasma damage increased. Interface trap dominated hot carrier degradation-as in n-MOSFET´s stressed under the peak substrate current condition or p-MOSFET´s stressed at V/sub gs/=V/sub ds/-was not affected by plasma damage. Then both electron trapping and interface trap generation impact hot carrier degradation-as in n-MOSFET´s stressed at V/sub gs/=V/sub ds/-plasma damage had a measurable but smaller effect on the failure statistics. These results are explained in terms of the differing impact of thermal annealing on bulk and interface traps. Finally, we show that reduced damage processes can mitigate the impact of plasma damage on MOSFET hot carrier robustness.<>
Keywords :
electron traps; hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device testing; static electrification; statistical analysis; MOSFET hot carrier robustness; electron trapping; failure data; failure statistics; hot carrier failure times; hot carrier reliability; interface trap dominated hot carrier degradation; interface trap generation impact hot carrier degradation; median time-to-fail; n-MOSFET´s; n-channel MOSFET; p-MOSFET´s; p-channel MOSFET; peak gate current; peak substrate current condition; plasma damage; plasma-induced charging damage; statistical distributions; stress bias regimes; thermal annealing; Annealing; Electron traps; Hot carriers; MOSFET circuits; Plasma measurements; Robustness; Statistical distributions; Statistics; Stress measurement; Thermal degradation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
Type :
conf
DOI :
10.1109/RELPHY.1994.307859
Filename :
307859
Link To Document :
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