• DocumentCode
    1957236
  • Title

    Accurate, predictive modeling of soft error rate due to cosmic rays and chip alpha radiation

  • Author

    Srinivasan, G.R. ; Murley, P.C. ; Tang, H.K.

  • Author_Institution
    R&D Center, IBM Corp., Hopewell Junction, NY, USA
  • fYear
    1994
  • fDate
    11-14 April 1994
  • Firstpage
    12
  • Lastpage
    16
  • Abstract
    We report here the development of a unique and comprehensive computer program (SEMM) to calculate the probability of soft fails in integrated circuits due to alpha particles emanating from the chip materials and due to terrestrial cosmic rays. This model treats all failure modes on an event by event basis allowing for all nuclear reactions and pulse shape effects. It is a three-dimensional design tool that takes the detailed chip layout and profile information to compute the soft error rate and is used without any parameter fitting. SEMM has been extensively tested with hot sources, high energy proton beams, and high elevation cosmic ray tests. Applications of SEMM to bipolar and CMOS chips and considerations for building in reliability for radiation induced soft fails are also discussed.<>
  • Keywords
    alpha-particle effects; circuit CAD; circuit analysis computing; circuit reliability; cosmic rays; errors; failure analysis; integrated memory circuits; monolithic integrated circuits; radiation hardening (electronics); semiconductor device models; CMOS chips; SEMM; SER; alpha particles; bipolar chips; chip alpha radiation; chip materials; computer program; cosmic rays; failure modes; integrated circuits; predictive modeling; radiation induced soft fails; reliability; soft error rate; three-dimensional design tool; Alpha particles; Circuits; Cosmic rays; Error analysis; Particle tracking; Predictive models; Pulse shaping methods; Semiconductor device modeling; Shape; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    0-7803-1357-7
  • Type

    conf

  • DOI
    10.1109/RELPHY.1994.307864
  • Filename
    307864