Title :
Mechanism of Defects Formation in Ti1-xVxCoSb Semiconductor Solid Solution
Author :
Romaka, V.A. ; Stadnyk, Yu. ; Chekurin, V. ; Akselrud, L. ; Davydov, V. ; Gorelenko, Yu. ; Horyn, A.
Author_Institution :
NASU, Lviv
Abstract :
By means of of the combined X-ray diffraction the different ratio of the lattice sites occupation by Co and (Ti,V) atoms in the Ti1-xVxCoSb crystals was found. This is equal to doping the TiVCoSb semiconductor with two kinds of acceptor impurities. The break of metallic conductivity in the n-type semiconductor at the increase of the donor impurity concentration was revealed, and it was explained by the simultaneous initiation of acceptor impurity.
Keywords :
X-ray diffraction; cobalt compounds; crystal defects; impurity states; semiconductor doping; semiconductor materials; titanium compounds; vanadium compounds; (Ti,V) atoms; Co atom; Ti1-xVxCoSb; X-ray diffraction; acceptor impurity; defects; donor impurity; doping; lattice site occupation; metallic conductivity; n-type semiconductor; semiconductor solid solution; Conductivity; Crystallization; Crystals; Lattices; Mathematics; Semiconductor device doping; Semiconductor impurities; Solids; Testing; X-ray diffraction;
Conference_Titel :
Direct and Inverse Problems of Electromagnetic and Acoustic Wave Theory, 2007 XIIth International Seminar/Workshop on
Conference_Location :
Lviv
Print_ISBN :
978-966-02-4237-1
DOI :
10.1109/DIPED.2007.4373594
