DocumentCode :
1957297
Title :
Effect of pressure on the Q factor and the resonance frequency of SiN microcantilevers
Author :
Gavan, Khashayar Babaei ; Van der Heijden, Joost ; Van der Drift, Emile W J M ; Van der Zant, Herre S J
Author_Institution :
Kavli Inst. of Nanosci., Tech. Univ. Delft, Delft
fYear :
2009
fDate :
5-8 Jan. 2009
Firstpage :
380
Lastpage :
384
Abstract :
A systematic study of the quality factor and resonance behavior of flexural and torsional modes of silicon nitride cantilevers vs. pressure is presented. Different anchoring, i.e., with and without undercut, is studied in the range between 3 mPa and atmospheric pressure. Thermal noise spectra of the cantilevers have been measured using a home-made optical deflection setup with an appropriately windowed vacuum chamber. The experimental data on the pressure dependence of the quality factor of the first three flexural modes is in good agreement with existing theories for the molecular and viscous regimes, for both the freestanding and suspended cantilevers. The corresponding gradual decrease in the resonance frequency to a maximum of 5% from vacuum to atmospheric pressure can be explained by the air mass effect. A small increase of the resonance frequency just prior to this downward shift might be attributed to a slight cooling away of heat from the optical beam or alternatively to a slight stiffening of the cantilever due to residual gas absorption in the near-surface region.
Keywords :
Q-factor; cantilevers; micromechanical devices; silicon compounds; thermal noise; Q factor; SiN; SiN microcantilevers; optical deflection setup; quality factor; resonance frequency; thermal noise spectra; Absorption; Atmospheric measurements; Cooling; Noise measurement; Optical beams; Optical noise; Q factor; Resonance; Resonant frequency; Silicon compounds; Damping; Eigenfrequency; Microresonators; Q factor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
Type :
conf
DOI :
10.1109/NEMS.2009.5068600
Filename :
5068600
Link To Document :
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