DocumentCode :
1957310
Title :
Optical characterization of Ge-on-Si laser gain media
Author :
Bessette, Jonathan T. ; Camacho-Aguilera, Rodolfo ; Cai, Yan ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
130
Lastpage :
132
Abstract :
Tensile strained Ge films with P concentrations as high as 3.4 × 1019 cm-3 are grown using UHVCVD. Photoluminescence measurements reveal significant direct band gap narrowing, enhanced photoemission, and optical bleaching.
Keywords :
Ge-Si alloys; chemical vapour deposition; optical saturable absorption; photoemission; photoluminescence; Ge-on-Si laser gain media; P concentrations; Si-Ge; UHVCVD; direct band gap narrowing; optical bleaching; optical characterization; photoemission; photoluminescence measurements; tensile strained Ge films; Doping; Optical films; Optical pumping; Optical waveguides; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053739
Filename :
6053739
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1957310
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