• DocumentCode
    1957310
  • Title

    Optical characterization of Ge-on-Si laser gain media

  • Author

    Bessette, Jonathan T. ; Camacho-Aguilera, Rodolfo ; Cai, Yan ; Kimerling, Lionel C. ; Michel, Jurgen

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2011
  • fDate
    14-16 Sept. 2011
  • Firstpage
    130
  • Lastpage
    132
  • Abstract
    Tensile strained Ge films with P concentrations as high as 3.4 × 1019 cm-3 are grown using UHVCVD. Photoluminescence measurements reveal significant direct band gap narrowing, enhanced photoemission, and optical bleaching.
  • Keywords
    Ge-Si alloys; chemical vapour deposition; optical saturable absorption; photoemission; photoluminescence; Ge-on-Si laser gain media; P concentrations; Si-Ge; UHVCVD; direct band gap narrowing; optical bleaching; optical characterization; photoemission; photoluminescence measurements; tensile strained Ge films; Doping; Optical films; Optical pumping; Optical waveguides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2011 8th IEEE International Conference on
  • Conference_Location
    London
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-8338-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2011.6053739
  • Filename
    6053739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1957310