DocumentCode
1957366
Title
Analysis of the self-test characteristics of a micromachined accelerometer
Author
Chen, Weiping ; Chen, Xiaoliang ; Zheng, Guoguang ; Liu, Xiaowei ; Zhang, Haifeng
Author_Institution
MEMS Center, Harbin Inst. of Technol., Harbin
fYear
2009
fDate
5-8 Jan. 2009
Firstpage
396
Lastpage
399
Abstract
A hybrid micro-accelerometer system consisting of a lateral capacitive silicon micro-acceleration and a CMOS integrated readout circuit is presented. The self-test function of the micromachined accelerometer is realized by electrostatic method. The electrostatic force drives the proof mass to produce an equivalent acceleration. The electrostatic force, pull-in voltage and steady driving displacement are analyzed theoretically. Theoretical analysis is validated by testing the relation between the self-test driving voltage and the output voltage, and discussion about the test results is given. Owing to the error of the processing, the sensing gap between electrodes increases, and the static capacity decreases. Correspondingly, the generated electrostatic force is smaller than the theoretic value, the displacement of electrodes shortens, and the voltage sensitivity is lower than the simulation result.
Keywords
CMOS integrated circuits; accelerometers; automatic testing; micromachining; micromechanical devices; readout electronics; CMOS integrated readout circuit; driving displacement; electrode displacement; electrostatic force; electrostatic method; hybrid microaccelerometer system; lateral capacitive silicon microacceleration; micromachined accelerometer; output voltage; pull-in voltage; self-test driving voltage; voltage sensitivity; Accelerometers; Automatic testing; Built-in self-test; Capacitive sensors; Capacitors; Circuit testing; DC generators; Electrodes; Electrostatics; Voltage; Accelerometer; Electrostatic force; MEMS; Self-test function;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4244-4629-2
Electronic_ISBN
978-1-4244-4630-8
Type
conf
DOI
10.1109/NEMS.2009.5068603
Filename
5068603
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