• DocumentCode
    1957366
  • Title

    Analysis of the self-test characteristics of a micromachined accelerometer

  • Author

    Chen, Weiping ; Chen, Xiaoliang ; Zheng, Guoguang ; Liu, Xiaowei ; Zhang, Haifeng

  • Author_Institution
    MEMS Center, Harbin Inst. of Technol., Harbin
  • fYear
    2009
  • fDate
    5-8 Jan. 2009
  • Firstpage
    396
  • Lastpage
    399
  • Abstract
    A hybrid micro-accelerometer system consisting of a lateral capacitive silicon micro-acceleration and a CMOS integrated readout circuit is presented. The self-test function of the micromachined accelerometer is realized by electrostatic method. The electrostatic force drives the proof mass to produce an equivalent acceleration. The electrostatic force, pull-in voltage and steady driving displacement are analyzed theoretically. Theoretical analysis is validated by testing the relation between the self-test driving voltage and the output voltage, and discussion about the test results is given. Owing to the error of the processing, the sensing gap between electrodes increases, and the static capacity decreases. Correspondingly, the generated electrostatic force is smaller than the theoretic value, the displacement of electrodes shortens, and the voltage sensitivity is lower than the simulation result.
  • Keywords
    CMOS integrated circuits; accelerometers; automatic testing; micromachining; micromechanical devices; readout electronics; CMOS integrated readout circuit; driving displacement; electrode displacement; electrostatic force; electrostatic method; hybrid microaccelerometer system; lateral capacitive silicon microacceleration; micromachined accelerometer; output voltage; pull-in voltage; self-test driving voltage; voltage sensitivity; Accelerometers; Automatic testing; Built-in self-test; Capacitive sensors; Capacitors; Circuit testing; DC generators; Electrodes; Electrostatics; Voltage; Accelerometer; Electrostatic force; MEMS; Self-test function;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4244-4629-2
  • Electronic_ISBN
    978-1-4244-4630-8
  • Type

    conf

  • DOI
    10.1109/NEMS.2009.5068603
  • Filename
    5068603