Title :
Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure
Author :
Masaud, T.M.B. ; Jaberansary, E. ; Bagnall, D.M. ; Chong, H.M.H.
Author_Institution :
Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
Abstract :
We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20μm have been achieved.
Keywords :
II-VI semiconductors; electro-optical switches; elemental semiconductors; silicon; zinc compounds; ZnO-Si; heterojunction structure; hybrid waveguide-based optical switch; silicon electro-optic switch; size 20 mum; Heterojunctions; Microcavities; Modulation; Optical switches; Optical waveguides; Silicon; Zinc oxide; Silicon photonics; electro-optics; heterojunction; plasma dispersion and Bragg reflectors;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053741
