DocumentCode
1957378
Title
Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure
Author
Masaud, T.M.B. ; Jaberansary, E. ; Bagnall, D.M. ; Chong, H.M.H.
Author_Institution
Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
136
Lastpage
138
Abstract
We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20μm have been achieved.
Keywords
II-VI semiconductors; electro-optical switches; elemental semiconductors; silicon; zinc compounds; ZnO-Si; heterojunction structure; hybrid waveguide-based optical switch; silicon electro-optic switch; size 20 mum; Heterojunctions; Microcavities; Modulation; Optical switches; Optical waveguides; Silicon; Zinc oxide; Silicon photonics; electro-optics; heterojunction; plasma dispersion and Bragg reflectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053741
Filename
6053741
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