Title :
SiN-based micro cantilever actuators using NdFeB/Ta permanent magnetic thin film
Author :
Sen Yao ; Goto, Satoshi ; Sakurai, Junpei ; Shinshi, Tadahiko ; Uehara, Minoru ; Yamamoto, Hitoshi
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama
Abstract :
SiN-based micro cantilever actuators with lengths of the order of 1 mm and NdFeB/Ta thin films for actuation were designed, fabricated and characterized. Multilayered thin films of NdFeB and Ta, with total thicknesses of 13 mum and 3 mum, were deposited on 3 mum-thick SiN cantilevers by magnetron sputtering. The remnant flux density and coercive force of the thin film were as high as those obtained for bulk NdFeB magnets. The SiN based magnetic actuator showed good strength even when undergoing considerable bending. Large bidirectional out-of-plane displacements (up to 700 mum) were generated using an air cored coil placed beneath the cantilevers. Static and dynamic evaluations were carried out using a CCD camera and an optical fiber displacement sensor, respectively. The experimentally measured displacements were in agreement with simulated values.
Keywords :
CCD image sensors; boron alloys; cantilevers; displacement measurement; electromagnetic actuators; fibre optic sensors; iron alloys; magnetic multilayers; magnetic thin film devices; microactuators; microfabrication; neodymium alloys; silicon compounds; sputtered coatings; tantalum; CCD camera; NdFeB-Ta; SiN; air cored coil; bending; bidirectional out-of-plane displacement; coercive force; displacement measurement; magnetic actuator; magnetron sputtering; micro cantilever actuator; microfabrication; multilayered thin films; optical fiber displacement sensor; permanent magnetic thin film; remnant flux density; size 1 mm; size 1 mum; size 3 mum; Actuators; Charge coupled devices; Coercive force; Coils; Magnetic cores; Magnetic films; Magnetic flux; Magnets; Silicon compounds; Sputtering;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
DOI :
10.1109/NEMS.2009.5068608