3-D simulation analysis of high performance SOI lateral BJT for RF applications

Summary form only given. In view of the rapid growth of the portable wireless communications market, the development of low-power and low-cost RF device technology is becoming important. The SOI lateral BJT has attracted considerable interest due to its low parasitic capacitance and simplified process. However, in the previous reports (Higaki et al. 1991; Shahidi et al. 1991; Babcock et al, 1996), the maximum f/sub max/ is less than half that of conventional bulk Si counterparts. This is presumably due to the high base-resistance (R/sub b/). In this work, we propose novel and practical SOI lateral BJTs which feature drastically reduced R/sup b/. A maximum operating frequency (f/sub max/) as high as 111 GHz is predicted.