DocumentCode :
1957639
Title :
Silicon and germanium quantum well light-emitting diode
Author :
Saito, Shin-ichi
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo, Japan
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
166
Lastpage :
168
Abstract :
I will review our attempts to develop monolithic light sources for silicon photonics. Modern silicon fabrication technology is matured enough to make light-emitting silicon and germanium quantum wells, called fins, by top-down processes.
Keywords :
elemental semiconductors; germanium; light emitting diodes; light sources; optical fabrication; quantum well devices; semiconductor quantum wells; silicon; Ge; Si; monolithic light sources; quantum well light-emitting diode; silicon fabrication technology; silicon photonics; top-down processes; Light emitting diodes; Optical surface waves; Optical waveguides; Photonics; Silicon; Stimulated emission; Vertical cavity surface emitting lasers; fin; quantum confinement; silicon and germanium light soruce;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053751
Filename :
6053751
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1957639
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