Title :
Parametric study of aluminum nitride Lamb wave resonators
Author :
Gorisse, M. ; Domingue, F. ; Filisan, G. Polo ; Billard, C. ; Koné, I. ; Reinhardt, A. ; Defaÿ, E. ; Aïd, M.
Author_Institution :
CEA, LETI, Grenoble, France
Abstract :
In this paper, we propose a parametric study of aluminum nitride Lamb wave resonators. A Film Bulk Acoustic Resonator (FBAR) technology was used and integrated on a 200 mm silicon substrates process flow performed on a standard CMOS fabrication line. Experimental results show that frequency is defined mostly by the period of interdigitated electrodes, but also by a competing contribution of membrane width.
Keywords :
CMOS integrated circuits; aluminium compounds; bulk acoustic wave devices; surface acoustic wave resonators; AlN; CMOS fabrication line; FBAR technology; aluminum nitride Lamb wave resonator; film bulk acoustic resonator; interdigitated electrode; membrane width; silicon substrate process flow; Couplings; Electrodes; Fingers; Optical resonators; Q factor; Resonant frequency; Silicon; FBAR; Lamb wave resonators; aluminum nitride;
Conference_Titel :
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0382-9
DOI :
10.1109/ULTSYM.2010.5935720
