Title :
Investigation of InGaN/GaN multiple quantum wells with strain relief behavior for light-emitting diodes
Author :
Chang, T.W. ; Chung, T.J. ; Ru, T. ; Nee, T.E. ; Lu, H.C. ; Wu, G.M.
Author_Institution :
Inst. of Electro-Opt. Eng., Chang Gung Univ., Taoyuan
Abstract :
In this paper, we studied a method to reduce the compressive strain in the InGaN/GaN multiple quantum well (MQW) structures by inserting a strain relief layer between n-GaN and MQWs. The improvements in the interface quality and the optical properties were investigated by photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) analysis. The samples showed S-shaped emission energy peak and stronger band filling effect in the band tail model. It exhibited the higher activation energy and reduced localization effect. In addition, we have characterized the interface quality and optical properties by strain relief in InGaN/GaN multiple quantum wells based on the temperature-dependent PL analysis. The experimental results would be discussed with supporting models.
Keywords :
III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor quantum wells; InGaN-GaN; S-shaped emission energy peak; activation energy; band filling effect; band tail model; high-resolution X-ray diffraction; light-emitting diodes; multiple quantum wells; optical properties; photoluminescence; Capacitive sensors; Filling; Gallium nitride; Light emitting diodes; Optical diffraction; Photoluminescence; Quantum well devices; Stimulated emission; Tail; X-ray diffraction; gallium nitride; interface; multiple quantum well; optical properties; strain relief;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
DOI :
10.1109/NEMS.2009.5068624
