DocumentCode
1957828
Title
Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers
Author
Camacho-Aguilera, Rodolfo ; Bessette, Jonathan ; Cai, Yan ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
190
Lastpage
192
Abstract
Edge-emission electroluminescence from waveguide Ge-on-Si pnn heterojunction diode structures is demonstrated. Selective growth of highly phosphorus doped Ge in oxide trenches shows promise as a design for electrically pumped laser on Si.
Keywords
Ge-Si alloys; electroluminescence; integrated optics; optical waveguides; semiconductor diodes; Ge-Si; edge-emission electroluminescence; electrically pumped laser; highly doped pnn diodes; integrated lasers; oxide trenches; waveguide Ge-on-Si pnn heterojunction diode structures; Electroluminescence; Heterojunctions; Laser excitation; Optical waveguides; Photonic band gap; Semiconductor lasers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053759
Filename
6053759
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