Title :
Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers
Author :
Camacho-Aguilera, Rodolfo ; Bessette, Jonathan ; Cai, Yan ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
Edge-emission electroluminescence from waveguide Ge-on-Si pnn heterojunction diode structures is demonstrated. Selective growth of highly phosphorus doped Ge in oxide trenches shows promise as a design for electrically pumped laser on Si.
Keywords :
Ge-Si alloys; electroluminescence; integrated optics; optical waveguides; semiconductor diodes; Ge-Si; edge-emission electroluminescence; electrically pumped laser; highly doped pnn diodes; integrated lasers; oxide trenches; waveguide Ge-on-Si pnn heterojunction diode structures; Electroluminescence; Heterojunctions; Laser excitation; Optical waveguides; Photonic band gap; Semiconductor lasers; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053759
