Yield prediction and enhancement of monolithic amplifiers

Author

Hwang, Y. ; Ip, K. ; Yocom, P. ; Clark, M. ; Ngan, Y.C. ; Esfandiari, R. ; Mlinar, M.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

295

Lastpage

298

Abstract

Important device and matching circuit parameters that affect the RF performance of monolithic amplifiers are identified using a circuit simulator, and the critical process parameters that affect the MESFET device parameters are identified using a process simulator. Monte Carlo analysis is used to predict the RF yield of monolithic amplifiers. The calculated results are compared to the measured data and show good agreement. Several circuit design techniques to enhance the chip yield are described.<>

Keywords

MMIC; Monte Carlo methods; Schottky gate field effect transistors; digital simulation; microwave amplifiers; MESFET; Monte Carlo analysis; RF performance; RF yield; chip yield; circuit simulator; critical process parameters; matching circuit parameters; monolithic amplifiers; process simulator; Integrated circuit yield; MESFET circuits; Microwave circuits; Millimeter wave technology; Optical amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency identification; Resistors; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69346

Filename

69346