Flexible Microwave Single-Crystal Si TFTs with fmax of 5.5 GHz

Author

Pang, H. ; Yuan, H.-C. ; Lagally, Max G. ; Celler, G.K. ; Ma, Z.

Author_Institution

Univ. of Wisconsin-Madison, Madison

fYear

2007

fDate

18-20 June 2007

Firstpage

15

Lastpage

16

Abstract

Microwave thin-film transistors on flexible plastic substrate using single-crystal Si as active channel material are reported in this paper. By employing a new TFT design, a maximum oscillation frequency (f_max) of 5.5 GHz, the highest reported speed for any devices on flexible substrate, has been achieved with an associated cut-off frequency (f_T) of 600 MHz. A maximum value of transconductance g_m of 22.28 muS with a gate length of about 1.5 mum is measured. The degradation of g_m in large gate-length device due to poor Si/SiO interface is described.

Keywords

flexible electronics; microwave transistors; semiconductor device models; silicon; thin film transistors; Si-SiO; active channel material; flexible microwave single-crystal; flexible plastic substrate; frequency 5.5 GHz; frequency 600 MHz; gate-length device degradation; maximum oscillation frequency; microwave thin-film transistors; single-crystal silicon; transconductance; Cutoff frequency; High speed optical techniques; Length measurement; Optical arrays; Parasitic capacitance; Plastics; Radio frequency; Semiconductor materials; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373629

Filename

4373629