DocumentCode :
1957944
Title :
Placement driven retiming with a coupled edge timing model
Author :
Neumann, I. ; Kunz, W.
Author_Institution :
Dept. of Comput. Sci., Frankfurt Univ., Germany
fYear :
2001
fDate :
4-8 Nov. 2001
Firstpage :
95
Lastpage :
102
Abstract :
Retiming is a widely investigated technique for performance optimization. It performs powerful modifications on a circuit netlist. However, often it is not clear whether the predicted performance improvement will still be valid after placement has been performed. This paper presents a new retiming algorithm using a highly accurate timing model taking into account the effect of retiming on capacitive loads of single wires as well as fanout systems. We propose the integration of retiming into a timing-driven standard cell placement environment based on simulated annealing. Retiming is used as an optimization technique throughout the whole placement process. The experimental results show the benefit of the proposed approach. In comparison with the conventional design flow based on standard FEAS (Leiserson and Saxe, J. VLSI and Computer Sys., pp. 41-67, 1983; and Algorithmica vol. 6, no 1, pp. 5-35, 1991.), our approach achieved an improvement in cycle time of up to 34% and 17% on the average.
Keywords :
circuit layout; circuit optimisation; logic design; sequential circuits; simulated annealing; timing; FEAS algorithin; capacitive loads; circuit netlist modifications; coupled edge timing model; cycle time; fanout systems; optimization technique; performance improvement; performance optimization; placement driven retiming; placement process; retiming; retiming algorithm; retiming integration; sequential circuits; simulated annealing; timing model; timing-driven standard cell placement environment; CMOS technology; Circuit testing; Coupling circuits; Delay; Logic testing; Optimization; Registers; Semiconductor device modeling; Timing; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Aided Design, 2001. ICCAD 2001. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA, USA
ISSN :
1092-3152
Print_ISBN :
0-7803-7247-6
Type :
conf
DOI :
10.1109/ICCAD.2001.968604
Filename :
968604
Link To Document :
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