DocumentCode :
1957968
Title :
Wide Bandgap Devices
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
25
Lastpage :
26
Keywords :
Aluminum gallium nitride; Gallium nitride; HEMTs; Laboratories; MODFETs; Microwave devices; Paper technology; Photonic band gap; Power semiconductor switches; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
South Bend, IN, USA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373634
Filename :
4373634
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1957968
