• DocumentCode
    1957972
  • Title

    Controlling strain in Ge on Si for EA modulators

  • Author

    Kuroyanagi, Ryo ; Ishikawa, Yasuhiko ; Tsuchizawa, Tai ; Itabashi, Seiichi ; Wada, Kazumi

  • Author_Institution
    Dept. of Marerials Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2011
  • fDate
    14-16 Sept. 2011
  • Firstpage
    211
  • Lastpage
    213
  • Abstract
    The concept of how to control operation wavelength of Ge electroabsorption modulators with external stress is shown. Enough stress to shift absorption edge of Ge is applied to Ge on Si in our experiments.
  • Keywords
    electro-optical modulation; electroabsorption; elemental semiconductors; germanium; silicon; strain control; EA modulator; Ge-Si; electroabsorption modulator; operation wavelength; strain control; Absorption; Modulation; Silicon; Silicon compounds; Strain; Stress; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2011 8th IEEE International Conference on
  • Conference_Location
    London
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-8338-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2011.6053766
  • Filename
    6053766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1957972