Title :
Novel 1 kv, normally-off, vertically integrated, dual-gate VJFET power switch with a low 4.6 mωcm2 on-state resistance
Author :
Nechay, B. ; Stewart, E. ; Veliadis, V. ; McNutt, T. ; Hearne, H. ; DeSalvo, G. ; Clarke, Christopher ; Scozzie, S.
Author_Institution :
U.S. Army, Adelphi
Abstract :
In this abstract, Northrop Grumman presents a novel monolithically integrated 1 kV normally-off VJFET power switch that combines a normally-off VJFET section with a normally-on VJFET section in a single vertical structure. The upper gates control the normally-off section while the lower-gates control the normally-on section. Depending on the specifics of the switching application, the device can be either controlled only by the upper gate in cascode configuration or be switched in shorted-gate configuration. In conclusion, Northrop Grumman has successfully developed a novel SiC, vertically integrated, 1 kV, dual-gate VJFET normally-off power switch with a low 4.6 mΩcm2 on-state resistance.
Keywords :
field effect transistor switches; junction gate field effect transistors; monolithic integrated circuits; silicon compounds; SiC; cascode configuration; dual-gate VJFET power switch; monolithically integrated switch; normally-off VJFET section; on-state resistance; shorted-gate configuration; vertically integrated switch; voltage 1 kV; Automatic control; Contact resistance; Electric breakdown; Etching; Power conditioning; Power transistors; Silicon carbide; Switches; Thermal conductivity; Voltage;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373636
