• DocumentCode
    1958000
  • Title

    Direct gap photoluminescence and electroluminescence in Ge1−ySny alloys

  • Author

    Roucka, Radek ; Mathews, J. ; Menendez, Jose ; Kouvetakis, J.

  • Author_Institution
    Dept. of Chem., Arizona State Univ., Tempe, AZ, USA
  • fYear
    2011
  • fDate
    14-16 Sept. 2011
  • Firstpage
    214
  • Lastpage
    216
  • Abstract
    Direct-gap photoluminescence and electroluminescence has been observed in Ge1-ySny alloys. The emission in both cases is dominated by direct transitions exhibiting the expected compositional dependence. The data are consistent with the expected reduction of the Γ-L separation.
  • Keywords
    electroluminescence; energy gap; germanium alloys; metallic thin films; photoluminescence; tin alloys; Γ-L separation; Ge1-ySny; direct band gap photoluminescence; electroluminescence; thin films; Doping; Electroluminescence; Photoluminescence; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2011 8th IEEE International Conference on
  • Conference_Location
    London
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-8338-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2011.6053767
  • Filename
    6053767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1958000