DocumentCode
1958025
Title
AlGaN/GaN HEMTs on Diamond Substrate
Author
Dumka, Deep C. ; Saunier, Paul
Author_Institution
TriQuint Semicond. Inc., Richardson
fYear
2007
fDate
18-20 June 2007
Firstpage
31
Lastpage
32
Abstract
In this paper AlGaN/GaN high electron mobility transistor (HEMT) fabricated on diamond substrate is presented. Epitaxial AlGaN/GaN layers were first grown on high resistivity Si (111) substrate and transferred to polycrystalline diamond substrate, which was separately grown by chemical vapor deposition (CVD). It is concluded that these are the best-reported results for a transistor using GaN on diamond material.
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; diamond; gallium compounds; high electron mobility transistors; semiconductor epitaxial layers; silicon; AlGaN-GaN; C; CVD; HEMT; Si; chemical vapor deposition; epitaxial layers; high electron mobility transistor; high resistivity Si (111) substrate; polycrystalline diamond substrate; Aluminum gallium nitride; Chemical vapor deposition; Gallium nitride; HEMTs; MODFETs; Power transistors; Silicon carbide; Substrates; Thermal conductivity; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373637
Filename
4373637
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