Title :
Progress in GaN Performances and Reliability
Author :
Saunier, P. ; Lee, C. ; Balistreri, A. ; Dumka, D. ; Jimenez, J. ; Tserng, H.Q. ; Kao, M.Y. ; Chao, P.C. ; Chu, K. ; Souzis, A. ; Eliashevich, I. ; Guo, S. ; del Alamo, J. ; Joh, J. ; Shur, M.
Author_Institution :
TriQuint Semicond. Texas, Richardson
Abstract :
With the DARPA Wide Bandgap Semiconductor Technology RF Thrust Contract, TriQuint Semiconductor and its partners, BAE Systems, Lockheed Martin, IQE-RF, II-VI, Nitronex, M.I.T., and R.P.I, are achieving great progress towards the overall goal of making gallium nitride a revolutionary RF technology ready to be inserted in defense and commercial applications. Performance and reliability are two critical components of success (along with cost and manufacturability). In this paper we will discuss these two aspects.
Keywords :
III-V semiconductors; gallium compounds; semiconductor device reliability; semiconductor technology; wide band gap semiconductors; BAE Systems; DARPA Wide Bandgap Semiconductor Technology RF Thrust Contract; GaN; II-VI; IQE-RF; Lockheed Martin; M.I.T; Nitronex; R.P.I; TriQuint Semiconductor; commercial applications; defense applications; gallium nitride performance; reliability; Aluminum gallium nitride; Breakdown voltage; Buffer layers; Crystalline materials; Electrons; Gallium nitride; Lattices; Materials reliability; Radio frequency; Thermal conductivity; AlGaN/GaN; DARPA MTO; GaN; MMIC;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373639
