• DocumentCode
    1958066
  • Title

    AlGaN/GaN HEMTs with Large Angle Implanted Nonalloyed Ohmic Contacts

  • Author

    Recht, F. ; McCarthy, L. ; Shen, L. ; Poblenz, C. ; Corrion, A. ; Speck, J.S. ; Mishra, U.K.

  • Author_Institution
    California Univ., Santa Barbara
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    37
  • Lastpage
    38
  • Abstract
    In this work we report AIGaN/GaN HEMTs with nonalloyed ohmic contacts by large angle ion implantation with a contact resistance to the channel of 0.2 Omegamm.
  • Keywords
    III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; ion implantation; ohmic contacts; semiconductor doping; wide band gap semiconductors; AlGaN-GaN; HEMT; contact resistance; large angle ion implantation; nonalloyed ohmic contacts; Aluminum gallium nitride; Contact resistance; Electrons; Gallium nitride; HEMTs; Ion implantation; Leakage current; MODFETs; Ohmic contacts; Radar;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373640
  • Filename
    4373640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1958066