Title :
Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-based HEMTs
Author :
Pala, N. ; Yang, Z. ; Koudymov, A. ; Hu, X. ; Deng, J. ; Gaska, R. ; Simin, G. ; Shur, M.S.
Author_Institution :
Sensor Electron. Technol., Columbia
Abstract :
This paper reports a novel approach in designing high frequency AlGaN/GaN HEMTs based on gate-drain field engineering utilizing a drain-connected field controlling electrode. The absence of frequency behavior degradation with drain bias as well as record high electron velocity values were obtained using gate-to-FCE separation of 0.5-0.7 mum. Thus, we demonstrated that the FCE is a powerful way to improving the high frequency, high power performance of GaN HEMTs at high drain biases.
Keywords :
III-V semiconductors; aluminium compounds; frequency response; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; drain-connected field controlling electrode; drain-to-gate field engineering; frequency response; gate-to-FCE separation; size 0.5 mum to 0.7 mum; Aluminum gallium nitride; Degradation; Design engineering; Electrodes; Electrons; Frequency response; Gallium nitride; HEMTs; MODFETs; Power engineering and energy;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373643
