DocumentCode
1958214
Title
Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology
Author
Rosales, Marc D. ; Polleux, Jean-Luc ; Algani, Catherine
Author_Institution
ESIEE Paris, Univ. Paris-Est, Paris, France
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
243
Lastpage
245
Abstract
We present the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process. It is shown that 50μm HPTs are exhibits highest gain.bandwidth product of 0.8GHz.A/W compared to the 10μm HPTs.
Keywords
Ge-Si alloys; bipolar transistor circuits; phototransistors; HPT; SiGe; bipolar process technology; frequency 80 GHz; heterojunction phototransistors; size 50 mum; Fiber optics; Frequency measurement; Gain; Gain measurement; Integrated optics; Optical device fabrication; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053777
Filename
6053777
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