Title :
Band to Band Tunneling Study in High Mobility Materials : III-V, Si, Ge and strained SiGe
Author :
Kim, Donghyun ; Krishnamohan, Tejas ; Smith, Lee ; Wong, H. S Philip ; Saraswat, Krishna C.
Author_Institution :
Stanford Univ., Stanford
Abstract :
Based on the complex bandstructure obtained by local empirical pseudopotential method (LEPM), we have developed a band to band tunneling model (BTBT), which captures band structure information, all possible transitions between different valleys, energy quantization and quantized density of states. Theoretical model is verified by experimental study on tunnel diodes on various semiconductors. BTBT leakage current in high mobility (mu) channel double gate FET is studied. We have shown that quantum confinement effect in DGFET can suppress BTBT leakage current.
Keywords :
Ge-Si alloys; III-V semiconductors; band structure; elemental semiconductors; field effect transistors; germanium; leakage currents; silicon; tunnelling; BTBT leakage current; DGFET; Ge; III-V materials; Si; SiGe; band structure information; band to band tunneling study; complex bandstructure; energy quantization; high mobility channel double gate FET; high mobility materials; local empirical pseudopotential method; quantized density of states; quantum confinement effect; tunnel diodes; Double-gate FETs; Energy capture; Germanium silicon alloys; III-V semiconductor materials; Leakage current; Potential well; Quantization; Semiconductor diodes; Silicon germanium; Tunneling;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373650
