Detailed characterization of Unibond/sup R/ structure buried oxide [SOI]

Summary form only given. Hydrogen irradiation of solids can induce cavities in their volume, leading to blistering and flaking phenomena upon the surface. By combining this microcavity formation with wafer bonding technologies, this physical phenomenon has been successfully optimized to obtain a Smart-Cut/sup R/ (in-depth splitting) of a thin silicon on oxide layer and applied to Unibond/sup R/ SOI wafer fabrication (Bruel, 1995). In this case, the wafer bonding step is realized by contacting an implanted oxidized wafer and a bare silicon wafer with a 10 /spl Aring/ native oxide. This paper deals with both physical and chemical characterization of Unibond/sup R/ SOI material buried oxide (BOX). We have focused on oxide properties evolution during processing, monitored by IR analysis, electrical and physical measurements.