DocumentCode
1958251
Title
Process Integration and Electrical Properties of Bilayer Metal Gate/High-k MOSFETs
Author
Lu, Ching-Huang ; Wong, Gloria M.T. ; Deal, Michael ; Clemens, Bruce M. ; Nishi, Yoshio
Author_Institution
Stanford Univ., Stanford
fYear
2007
fDate
18-20 June 2007
Firstpage
59
Lastpage
60
Abstract
In this paper, we demonstrate one possible integration scheme to achieve dual work function metal gates on high-k dielectrics by utilizing bilayer metal electrodes and a selective metal wet etch process. We achieve a ~0.85 eV difference in effective gate work functions and well-behaved transistor characteristics by using Al/W and Pt/W bilayer metal gates on Hf02 dielectrics.
Keywords
MOSFET; dielectric materials; electrodes; etching; hafnium compounds; CMOS technology; bilayer metal gate/high-k MOSFET; dual work function metal gates; gate leakage current; high-k dielectrics; metal gate electrodes; process integration; selective metal wet etch process; Degradation; Dielectric thin films; Electrodes; Etching; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFETs; Materials science and technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373651
Filename
4373651
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