DocumentCode
1958278
Title
Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering
Author
Arakawa, Kazuki ; Yanagitani, Takahiko ; Kano, Kazuhiko ; Teshigahara, Akihiko ; Akiyama, Morito
Author_Institution
Res. Labs., Denso Corp., Nisshin, Japan
fYear
2010
fDate
11-14 Oct. 2010
Firstpage
1050
Lastpage
1053
Abstract
It is difficult to synthesize c-axis tilted ScAlN films by using co-sputtering, because unidirectional oblique incident of sputtered particles is needed to obtain c-axis tilted structure. To realize the oblique incident, single source sputtering technique was proposed for c-axis tilted film deposition. ScAl alloy target was used to achieve ScAlN film synthesis instead of co-sputtering. As a result, c-axis highly tilted ScAlN film (tilt angle =33°) was obtained by using this deposition technique. From the result of film transducer loss measurement, we found that longitudinal and shear elasticity of AlN decreases by adding Sc. c-axis highly tilted ScAlN film showed giant k15´ values of 0.32 in spite of its low degree of orientation.
Keywords
III-V semiconductors; aluminium compounds; elasticity; scandium compounds; semiconductor thin films; sputter deposition; wide band gap semiconductors; RF magnetron sputtering; ScAlN; c-axis-tilted films; film transducer loss; shear elasticity; sputtered particles; Acoustics; Anodes; Couplings; Films; Metals; Propagation losses; Sputtering; RF magnetron sputtering; ScAl alloy target; ScAlN films; c axis tilted films;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location
San Diego, CA
ISSN
1948-5719
Print_ISBN
978-1-4577-0382-9
Type
conf
DOI
10.1109/ULTSYM.2010.5935747
Filename
5935747
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