• DocumentCode
    1958278
  • Title

    Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering

  • Author

    Arakawa, Kazuki ; Yanagitani, Takahiko ; Kano, Kazuhiko ; Teshigahara, Akihiko ; Akiyama, Morito

  • Author_Institution
    Res. Labs., Denso Corp., Nisshin, Japan
  • fYear
    2010
  • fDate
    11-14 Oct. 2010
  • Firstpage
    1050
  • Lastpage
    1053
  • Abstract
    It is difficult to synthesize c-axis tilted ScAlN films by using co-sputtering, because unidirectional oblique incident of sputtered particles is needed to obtain c-axis tilted structure. To realize the oblique incident, single source sputtering technique was proposed for c-axis tilted film deposition. ScAl alloy target was used to achieve ScAlN film synthesis instead of co-sputtering. As a result, c-axis highly tilted ScAlN film (tilt angle =33°) was obtained by using this deposition technique. From the result of film transducer loss measurement, we found that longitudinal and shear elasticity of AlN decreases by adding Sc. c-axis highly tilted ScAlN film showed giant k15´ values of 0.32 in spite of its low degree of orientation.
  • Keywords
    III-V semiconductors; aluminium compounds; elasticity; scandium compounds; semiconductor thin films; sputter deposition; wide band gap semiconductors; RF magnetron sputtering; ScAlN; c-axis-tilted films; film transducer loss; shear elasticity; sputtered particles; Acoustics; Anodes; Couplings; Films; Metals; Propagation losses; Sputtering; RF magnetron sputtering; ScAl alloy target; ScAlN films; c axis tilted films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2010 IEEE
  • Conference_Location
    San Diego, CA
  • ISSN
    1948-5719
  • Print_ISBN
    978-1-4577-0382-9
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2010.5935747
  • Filename
    5935747