Title :
Microwave Noise Characterization of Enhancement-Mode AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs
Author :
Liu, J. ; Song, D. ; Cheng, Z. ; Tang, W.C.-W. ; Lau, K.M. ; Chen, K.J.
Author_Institution :
Hong Kong Univ. of Sci. & Technol., Kowloon
Abstract :
In this work, we report the microwave noise characterization of E-mode double-heterojunction HEMT (DH-HEMT). The E-mode DH-HEMT shows reduced noise figure compared to its D-mode counterpart, mainly owing to the lower gate leakage current achieved by the Schottky barrier enhancement in fluorine-plasma treated gate region and the favorable bias conditions for the E-mode HEMT.
Keywords :
III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; microwave measurement; semiconductor device measurement; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN-InGaN-GaN; Schottky barrier enhancement; enhancement-mode double-heterojunction HEMT; fluorine-plasma treated gate region; gate leakage current; microwave noise characterization; Aluminum gallium nitride; Electron devices; Gallium nitride; HEMTs; Leakage current; Low-noise amplifiers; MODFETs; Microwave devices; Noise figure; Threshold voltage;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373658
