• DocumentCode
    1958450
  • Title

    Techniques for including dielectrics when extracting passive low-order models of high speed interconnect

  • Author

    Daniel, L. ; Sangiovanni-Vincentelli, A. ; White, J.

  • Author_Institution
    California Univ., Berkeley, CA, USA
  • fYear
    2001
  • fDate
    4-8 Nov. 2001
  • Firstpage
    240
  • Lastpage
    244
  • Abstract
    Interconnect structures including dielectrics can be modeled by an integral equation method using volume currents and surface charges for the conductors, and volume polarization currents and surface charges for the dielectrics. In this paper we describe a mesh analysis approach for computing the discretized currents in both the conductors and the dielectrics. We then show that this fully mesh-based formulation can be cast into a form using provably positive semidefinite matrices, making for easy application of Krylov-subspace based model-reduction schemes to generate accurate guaranteed passive reduced-order models. Several printed circuit board examples are given to demonstrate the effectiveness of the strategy.
  • Keywords
    dielectric thin films; high-speed integrated circuits; integral equations; integrated circuit interconnections; integrated circuit layout; interconnections; matrix algebra; multichip modules; printed circuit layout; reduced order systems; Krylov-subspace based model-reduction schemes; MCMs; PCBs; conductors; dielectrics; discretized currents; high speed interconnect; integral equation method; integrated circuits; mesh analysis approach; multi-chip modules; passive low-order models; passive reduced-order models; positive semidefinite matrices; printed circuit board; surface charges; volume currents; volume integral equation; volume polarization currents; Conductors; Dielectrics; Electronic circuits; Integral equations; Integrated circuit interconnections; Jacobian matrices; Maxwell equations; Permission; Printed circuits; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Aided Design, 2001. ICCAD 2001. IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA, USA
  • ISSN
    1092-3152
  • Print_ISBN
    0-7803-7247-6
  • Type

    conf

  • DOI
    10.1109/ICCAD.2001.968625
  • Filename
    968625