DocumentCode
1958470
Title
Design of surface-plasmon-enhanced Ge-Si light-emitting diode
Author
Jeong, Intae ; Park, Young June
Author_Institution
Grad. Sch. of Convergence Sci. & Technol., Dept. of Nano Sci. & Technol., Seoul Nat. Univ., Suwon, South Korea
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
275
Lastpage
277
Abstract
We propose a FIN type Germanium-Silicon heterojunction light-emitting diode with metal gates on both sides. The metal gates provide the plasmon enhancement and the electrical modulation of the PN diode. Using the numerical analysis, we propose the optimal device structure to achieve the best light emitting efficiency.
Keywords
Ge-Si alloys; light emitting diodes; surface plasmons; FIN type heterojunction light-emitting diode; PN diode; SiGe; electrical modulation; light emitting efficiency; light-emitting diodes; metal gates; surface plasmon enhancement; Logic gates; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053788
Filename
6053788
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