DocumentCode :
1958496
Title :
All-silicon integrated photodetector for near infrared wavelengths based on the internal photoemission effect
Author :
Casalino, M. ; Sirleto, L. ; Iodice, M. ; Gioffrè, M. ; Rendina, I. ; Coppola, G.
Author_Institution :
Inst. for Microelectron. & Microsyst., Nat. Res. Council, Naples, Italy
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
278
Lastpage :
280
Abstract :
We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.
Keywords :
elemental semiconductors; infrared detectors; integrated optics; photodetectors; photoemission; silicon; Si; device responsivity; internal photoemission effect; near infrared all-silicon integrated photodetector; voltage 1 V; wavelength 1550 nm; Capacitance; Current measurement; Optical device fabrication; Optical films; Optical waveguides; Photodetectors; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053789
Filename :
6053789
Link To Document :
بازگشت