Body Thickness Optimization and Sensitivity Analysis for High Performance FinFETs

This article proposes a device optimization technique to achieve high performance in double-gate MOSFETs by considering the trade-off between on-current and gate capacitance with silicon thickness. It shows that the optimal silicon thickness varies based on the mode of operation (super-threshold or sub-threshold). Even though these devices have intrinsic body thickness variations, the effect of these variations reduces considerably as the number of fins increases.