DocumentCode :
1958546
Title :
Flash Memory Fabricated with Protein-Mediated PbSe Nanocrystal Assembly as Floating Gate
Author :
Tang, Shan ; Lee, Chang Hun ; Gao, Xiaoxia ; Banerjee, Sanjay K.
Author_Institution :
Univ. of Texas at Austin, Austin
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
93
Lastpage :
94
Abstract :
This work is based on our previously developed technique which used chaperonin protein as a template for NC assembly on MOS capacitors. Our study on floating gate flash memory fabricated with protein-mediated PbSe NCs applied to MOS transistors with greatly improved spatial uniformity will be presented in this paper. With these device characteristics, we expect PbSe NCs as floating gate to be promising for flash memories.
Keywords :
MOSFET; biomolecular electronics; flash memories; lead compounds; nanostructured materials; proteins; MOS transistors; PbSe; chaperonin protein; flash memory; floating gate; protein-mediated nanocrystal assembly; Assembly; Electrons; Fabrication; Flash memory; MOSFETs; Nanocrystals; Nonvolatile memory; Proteins; Testing; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373665
Filename :
4373665
Link To Document :
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