DocumentCode
1958546
Title
Flash Memory Fabricated with Protein-Mediated PbSe Nanocrystal Assembly as Floating Gate
Author
Tang, Shan ; Lee, Chang Hun ; Gao, Xiaoxia ; Banerjee, Sanjay K.
Author_Institution
Univ. of Texas at Austin, Austin
fYear
2007
fDate
18-20 June 2007
Firstpage
93
Lastpage
94
Abstract
This work is based on our previously developed technique which used chaperonin protein as a template for NC assembly on MOS capacitors. Our study on floating gate flash memory fabricated with protein-mediated PbSe NCs applied to MOS transistors with greatly improved spatial uniformity will be presented in this paper. With these device characteristics, we expect PbSe NCs as floating gate to be promising for flash memories.
Keywords
MOSFET; biomolecular electronics; flash memories; lead compounds; nanostructured materials; proteins; MOS transistors; PbSe; chaperonin protein; flash memory; floating gate; protein-mediated nanocrystal assembly; Assembly; Electrons; Fabrication; Flash memory; MOSFETs; Nanocrystals; Nonvolatile memory; Proteins; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373665
Filename
4373665
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