Title :
AlGaN/GaN Bidirectional Power Switch
Author :
Tipirneni, N. ; Wang, B. ; Monti, A. ; Simin, G.
Author_Institution :
South Carolina Univ., Columbia
Abstract :
This paper presents a novel approach to achieving BPS functionality using AIGaN/GaN HFETs and for the first time presents experimental data showing the power bidirectional capability of the devices. We present the first detailed study of the bidirectional power switching capability of single and dual gate AIGaN/GaN BPS. One approach to achieve a symmetrical voltage blocking capability in AIGaN/GaN HFET is to place the gate electrode in the middle of the source-drain spacing.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; power semiconductor switches; AlGaN-GaN; HFET; heterostructure field effect transistors; semiconductor bidirectional power switch; source-drain spacing; symmetrical voltage blocking capability; Aluminum gallium nitride; Electrodes; FETs; Gallium nitride; HEMTs; MODFETs; Matrix converters; Power conversion; Power semiconductor switches; Voltage;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373667
