DocumentCode
1958585
Title
Improved adhesion between C-MEMS and substrate by micromechanical interlocking
Author
Gong, Jie ; Tang, Zirong ; Shi, Tielin ; Liao, Guanglan ; Nie, Lei ; Liu, Shiyuan
Author_Institution
Sch. of Mech. Sci.&Eng., Huazhong Univ. of Sci. & Technol., Wuhan
fYear
2009
fDate
5-8 Jan. 2009
Firstpage
624
Lastpage
627
Abstract
This paper describes a new method to improve adhesion between high-aspect-ratio carbon micro/nano-structure and silicon substrate by micromechanical interlocking over conventional carbon micro-elecro-mechanical system (C-MEMS) process. Anisotropic wet chemical etching using potassium hydroxide (KOH) solution and aqueous tetramethyl ammonium hydroxide (TMAH) is applied to form various aspect-ratio and spacing pits in silicon substrate with and without a thin film layer of silicon dioxide, respectively. Great improvement on adhesion is demonstrated that the photoresist structure is found to remain robustly attached to substrate during the process of prolonged SU-8 photoresist development and immersion in heated 40% potassium hydroxide at 80degC. Furthermore, carbon MEMS after pyrolysis process is well bonded to silicon substrate without peeling off and high-aspect-ratio glassy-carbon MEMS remain upright.
Keywords
adhesion; bonding processes; carbon; etching; microfabrication; micromechanical devices; photoresists; pyrolysis; SU-8 photoresist development; Si; adhesion; anisotropic wet chemical etching; aqueous tetramethyl ammonium hydroxide; aspect ratio; bonding process; high-aspect-ratio glassy-carbon MEMS; micromechanical interlocking; potassium hydroxide solution; pyrolysis process; silicon substrate; spacing pits; temperature 80 C; Adhesives; Anisotropic magnetoresistance; Chemicals; Micromechanical devices; Resists; Robustness; Semiconductor thin films; Silicon compounds; Substrates; Wet etching; Carbon MEMS; adhesion; micromechanical interlocking;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4244-4629-2
Electronic_ISBN
978-1-4244-4630-8
Type
conf
DOI
10.1109/NEMS.2009.5068658
Filename
5068658
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