DocumentCode
1958626
Title
Schottky barrier light emitting diode in standard CMOS technology
Author
Huang, Beiju ; Wang, Wei ; Dong, Zan ; Zhang, Zanyun ; Guo, Weilian ; Chen, HongDa
Author_Institution
State Key Lab. on Integrated Optoelectron., Beijing, China
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
296
Lastpage
298
Abstract
Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from 673nm to 785nm.
Keywords
Schottky diodes; electroluminescence; light emitting diodes; Schottky barrier light emitting diode; stable electro-luminescent emission; standard CMOS technology; wavelength 673 nm to 785 nm; CMOS integrated circuits; CMOS technology; Electric breakdown; Metals; Schottky barriers; Schottky diodes; Silicon; Complementary Metal-Oxide-Semiconductor (CMOS); Schottky Barrier Diode (SBD); Silicon Photonics; Silicon based light emitting device (Si-LED);
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053795
Filename
6053795
Link To Document