DocumentCode
1958646
Title
Dynamic Two-Port Parameters of Ballistic Carbon Nanotube FETs: A Quantum Simulation Study
Author
Ouyang, Yijian ; Guo, Jing
Author_Institution
Univ. of Florida, Gainesville
fYear
2007
fDate
18-20 June 2007
Firstpage
105
Lastpage
106
Abstract
In this work, we simulated the intrinsic dynamic conductance matrix of ballistic CNTFETs using the time-dependent non-equilibrium Green´s function (NEGF) formalism.4´5 Plasmon wave propagation along ballistic metallic CNT interconnects is also studied.
Keywords
approximation theory; carbon nanotubes; field effect transistors; integrated circuit interconnections; nanotube devices; semiconductor nanotubes; FET; ballistic carbon nanotube; dynamic two-port parameters; field- effect transistor; intrinsic cut-off frequency; intrinsic dynamic conductance matrix; metallic interconnects; plasmon wave propagation; quantum simulation; quasi-static approximation; single-walled metallic carbon nanotubes; time-dependent non-equilibrium Green´s function; Computational modeling; Cutoff frequency; Electrodes; Electrostatics; Impedance; Inductance; Plasmons; Quantum capacitance; Quantum computing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373671
Filename
4373671
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