• DocumentCode
    1958697
  • Title

    High Performance ZnO Nanowire FET with ITO Contacts

  • Author

    Hollister, Matthew A. ; Le, John D. ; Xiao, Guanghua ; Lu, Xuekun ; Kiehl, Richard A.

  • Author_Institution
    Univ. of Minnesota, Minneapolis
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    113
  • Lastpage
    114
  • Abstract
    Nanowire FETs based on a ZnO channel, a SiO2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.
  • Keywords
    II-VI semiconductors; dielectric materials; field effect transistors; indium compounds; nanoelectronics; nanowires; silicon compounds; tin compounds; zinc compounds; FET fabrication; ITO-ZnO-SiO2-Si; gate dielectrics; indium-tin oxide source-drain contacts; nanowire FET performance; silicon substrate; transconductance; Conductivity; Contacts; Dielectric materials; FETs; Ferroelectric materials; Indium tin oxide; Semiconductor materials; Surface resistance; Transconductance; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373675
  • Filename
    4373675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1958697