Title :
High Performance ZnO Nanowire FET with ITO Contacts
Author :
Hollister, Matthew A. ; Le, John D. ; Xiao, Guanghua ; Lu, Xuekun ; Kiehl, Richard A.
Author_Institution :
Univ. of Minnesota, Minneapolis
Abstract :
Nanowire FETs based on a ZnO channel, a SiO2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.
Keywords :
II-VI semiconductors; dielectric materials; field effect transistors; indium compounds; nanoelectronics; nanowires; silicon compounds; tin compounds; zinc compounds; FET fabrication; ITO-ZnO-SiO2-Si; gate dielectrics; indium-tin oxide source-drain contacts; nanowire FET performance; silicon substrate; transconductance; Conductivity; Contacts; Dielectric materials; FETs; Ferroelectric materials; Indium tin oxide; Semiconductor materials; Surface resistance; Transconductance; Zinc oxide;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373675
