DocumentCode
1958746
Title
Simulation of solidly mounted BAW resonators using FEM combined with BEM and/or PML
Author
Tajic, Alireza ; Volatier, Alexandre ; Aigner, Robert ; Solal, Marc
Author_Institution
TriQuint Semicond. Inc., Apopka, FL, USA
fYear
2010
fDate
11-14 Oct. 2010
Firstpage
181
Lastpage
184
Abstract
Finite element method (FEM) has become an important approach in the modeling of bulk acoustic wave (BAW) resonators. Unfortunately FEM is not capable of describing unbounded regions, the substrate and the sides of the resonator. Perfectly matched layer (PML) can be used to prevent artificial reflection of the wave on the clamped sides, while the substrate is traditionally modeled by a boundary element method (BEM). This work presents numerical simulation of solidly mounted BAW resonators where both PML and BEM are used to model the substrate. With the correct adjustment of PML parameters, the resonator impedance computed with the FEM/PML model approaches the FEM/BEM results, both are in good agreement with the measured data.
Keywords
acoustic resonators; boundary-elements methods; bulk acoustic wave devices; finite element analysis; semiconductor device models; BEM; FEM; PML; artificial reflection; boundary element method; bulk acoustic wave resonator; finite element method; perfectly matched layer; resonator impedance; solidly mounted BAW resonator; Acoustics; Computational modeling; Finite element methods; Green´s function methods; Impedance; Resonant frequency; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location
San Diego, CA
ISSN
1948-5719
Print_ISBN
978-1-4577-0382-9
Type
conf
DOI
10.1109/ULTSYM.2010.5935769
Filename
5935769
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