• DocumentCode
    1958761
  • Title

    Inversion-type enhancement-mode InP MOSFETs with ALD Al2O3, HfO2 and HfAlO nanolaminates as high-k gate dielectrics

  • Author

    Wu, Y.Q. ; Xuan, Y. ; Ye, P.D. ; Cheng, Z. ; Lochtefeld, A.

  • Author_Institution
    Purdue Univ., West Lafayette
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    117
  • Lastpage
    118
  • Abstract
    We demonstrate here the use of ALD high-k dielectrics for the fabrication of E-mode InP MOSFETs exhibiting well-behaved transistor characteristics. These results suggest new opportunities for evaluating and applying InP as a novel high-mobility channel material for future ultimate CMOS applications.
  • Keywords
    CMOS integrated circuits; MOSFET; aluminium compounds; dielectric materials; hafnium compounds; indium compounds; laminates; ALD nanolaminates; Al2O3; CMOS; HfAlO; HfO2; InP; MOSFET; high-k gate dielectrics; high-mobility channel material; Capacitance-voltage characteristics; Drives; Electrons; Gallium arsenide; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Indium phosphide; MOSFETs; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373677
  • Filename
    4373677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1958761