• DocumentCode
    1958829
  • Title

    Native-Oxide-Confined High Index Contrast InAs Quantum-Dot Laser Diodes

  • Author

    Wang, Jusong ; Hall, Douglas C. ; Tokranov, Vadim ; Oktyabrsky, Serge

  • Author_Institution
    Univ. of Notre Dame, Notre Dame
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    In this paper, a native-oxide-confined HIC structure enabled by non-selective wet thermal oxidation, we have fabricated InAs QD LDs with improved performance (>40% decrease in threshold current density (Jth) and >40% increase in quantum efficiency (etad)) over HIC devices utilizing a deposited dielectric layer, thus demonstrating a simple, promising method for future QD LD fabrication.
  • Keywords
    III-V semiconductors; current density; etching; indium compounds; laser beams; optical fabrication; quantum dot lasers; refractive index; ridge waveguides; waveguide lasers; InAs; deeply-etched ridge waveguide structure; deposited dielectric layer; native-oxide-confined high index contrast laser; nonselective wet thermal oxidation; quantum efficiency; quantum-dot laser diode fabrication; threshold current density; Diodes; Dry etching; Gallium arsenide; Optical losses; Optical resonators; Optical scattering; Optical waveguides; Oxidation; Quantum dot lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373681
  • Filename
    4373681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1958829