DocumentCode :
1958829
Title :
Native-Oxide-Confined High Index Contrast InAs Quantum-Dot Laser Diodes
Author :
Wang, Jusong ; Hall, Douglas C. ; Tokranov, Vadim ; Oktyabrsky, Serge
Author_Institution :
Univ. of Notre Dame, Notre Dame
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
125
Lastpage :
126
Abstract :
In this paper, a native-oxide-confined HIC structure enabled by non-selective wet thermal oxidation, we have fabricated InAs QD LDs with improved performance (>40% decrease in threshold current density (Jth) and >40% increase in quantum efficiency (etad)) over HIC devices utilizing a deposited dielectric layer, thus demonstrating a simple, promising method for future QD LD fabrication.
Keywords :
III-V semiconductors; current density; etching; indium compounds; laser beams; optical fabrication; quantum dot lasers; refractive index; ridge waveguides; waveguide lasers; InAs; deeply-etched ridge waveguide structure; deposited dielectric layer; native-oxide-confined high index contrast laser; nonselective wet thermal oxidation; quantum efficiency; quantum-dot laser diode fabrication; threshold current density; Diodes; Dry etching; Gallium arsenide; Optical losses; Optical resonators; Optical scattering; Optical waveguides; Oxidation; Quantum dot lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373681
Filename :
4373681
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1958829
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