DocumentCode :
1958879
Title :
30 GHz Ge/SiGe multiple quantum well photodiode
Author :
Chaisaku, P. ; Marris-Morini, D. ; Isella, G. ; Chrastina, D. ; Roux, X. Le ; Edmond, S. ; Cassan, E. ; Coudevylle, J.-R. ; Vivien, L.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
332
Lastpage :
334
Abstract :
Surface-illuminated vertical p-i-n Ge/SiGe multiple quantum wells photodiodes are demonstrated with a low dark current density of 200 mA/cm2 and 10 GHz optical bandwidth at -1 V which reaches over 30 GHz at -7 V.
Keywords :
current density; dark conductivity; p-i-n photodiodes; semiconductor quantum wells; Ge-SiGe; dark current density; frequency 30 GHz; multiple quantum well photodiode; surface-illuminated vertical p-i-n photodiodes; voltage -1 V; voltage -7 V; Bandwidth; Fiber optics; High speed optical techniques; Optical device fabrication; Photodiodes; Quantum well devices; Silicon germanium; Ge/SiGe; Quantum-confined Stark effect; multiple quantum wells; p-i-n diode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053807
Filename :
6053807
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1958879
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