Title :
Electrical Characterization of Vertical InAs Nanowires on Si
Author :
Rehnstedt, C. ; Mårtensson, T. ; Thelander, C. ; Samuelson, L. ; Wernersson, Lars-Erik
Author_Institution :
Lund Univ., Lund
Abstract :
In this paper, electrical characterization of the InAs NWs and the InAs/Si heterojunctions was performed on all three differently doped Si substrates.
Keywords :
III-V semiconductors; MOCVD; indium compounds; nanowires; photolithography; semiconductor doping; semiconductor growth; semiconductor heterojunctions; silicon; vapour phase epitaxial growth; InAs; MOVPE; Si; electrical characterization; indium arsinide-silicon heterojunctions; metal-organic vapor phase epitaxy; optical lithography; substrate doping; vertical nanowires; Contact resistance; Doping; Etching; Gold; Nanowires; Plasma temperature; Resists; Silicon; Substrates; Wires;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373686
