Ultra-Low Resistance Ohmic Contacts to InGaAs/InP

Author

Singisetti, Uttam ; Crook, A.M. ; Lind, Erik ; Zimmerman, Jeramy D. ; Wistey, Mark A. ; Gossard, Arthur C. ; Rodwell, Mark J. W.

Author_Institution

Univ. of California, Santa Barbara

fYear

2007

fDate

18-20 June 2007

Firstpage

149

Lastpage

150

Abstract

An extremely low in situ metal contacts can be formed to (In,Ga)As on InP. it is also possible to form ultra low resistance ex situ contacts by improved surface treatment. However, unlike in situ contacts, ex situ contacts are very sensitive to surface preparation. Similar contact resistivities to InAs on GaAs were reported by Nittono et al. This is the first time such low metal-semiconductor contacts have been demonstrated in In_0.53Ga_0.47As system that does not deteriorate at least upto 500 degC. These thermally stable, extremely low resistances, ohmic contacts are an enabling technology for THz bandwidth InGaAs/InP HBTs, mm wave InGaAs HEMT technologies, and the evolving III-V MOSFET technologies.

Keywords

III-V semiconductors; contact resistance; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave bipolar transistors; millimetre wave field effect transistors; ohmic contacts; III- V MOSFET technologies; InGaAs-InP; contact resistivities; low metal-semiconductor contacts; millimeter wave HEMT technologies; surface treatment; terahertz bandwidth HBT technologies; thermally stable contacts; ultra low resistance ex situ contacts; ultra-low resistance ohmic contacts; Bandwidth; Conductivity; Contact resistance; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Ohmic contacts; Surface resistance; Surface treatment; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373692

Filename

4373692