• DocumentCode
    1959073
  • Title

    Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions

  • Author

    Xiao, Xi ; Li, Zhiyong ; Hu, Yingtao ; Yu, Yude ; Yu, Jinzhong

  • Author_Institution
    State Key Lab. of integrated Optoelectron., Beijing, China
  • fYear
    2011
  • fDate
    14-16 Sept. 2011
  • Firstpage
    359
  • Lastpage
    361
  • Abstract
    We present a high-speed silicon microring resonator with misalignment-tolerant interleaved p-n junctions. Moderate doping concentration of 2×1017 cm-3 results in a VπL of 0.98 V·cm and a total propagation loss of <;17 dB/cm. 8 GHz modulation bandwidth and ~30 GHz electric RC bandwidth are experimentally demonstrated.
  • Keywords
    electro-optical modulation; elemental semiconductors; micro-optics; optical modulation; optical resonators; semiconductor doping; silicon; Si; bandwidth 8 GHz; doping concentration; electric RC bandwidth; high speed silicon microring resonator; interleaved p-n junctions; misalignment tolerant high speed silicon microring modulator; modulation bandwidth; Bandwidth; Optical device fabrication; Optical modulation; Optical waveguides; P-n junctions; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2011 8th IEEE International Conference on
  • Conference_Location
    London
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-8338-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2011.6053816
  • Filename
    6053816