DocumentCode
1959073
Title
Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions
Author
Xiao, Xi ; Li, Zhiyong ; Hu, Yingtao ; Yu, Yude ; Yu, Jinzhong
Author_Institution
State Key Lab. of integrated Optoelectron., Beijing, China
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
359
Lastpage
361
Abstract
We present a high-speed silicon microring resonator with misalignment-tolerant interleaved p-n junctions. Moderate doping concentration of 2×1017 cm-3 results in a VπL of 0.98 V·cm and a total propagation loss of <;17 dB/cm. 8 GHz modulation bandwidth and ~30 GHz electric RC bandwidth are experimentally demonstrated.
Keywords
electro-optical modulation; elemental semiconductors; micro-optics; optical modulation; optical resonators; semiconductor doping; silicon; Si; bandwidth 8 GHz; doping concentration; electric RC bandwidth; high speed silicon microring resonator; interleaved p-n junctions; misalignment tolerant high speed silicon microring modulator; modulation bandwidth; Bandwidth; Optical device fabrication; Optical modulation; Optical waveguides; P-n junctions; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053816
Filename
6053816
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