Delta-Doped Si/SiGe Zero-Bias Backward Diodes for Micro-Wave Detection

Author

Park, Si-Young ; Yu, Ronghua ; Chung, Sung-Yong ; Berger, Paul R. ; Thompson, Phillip E. ; Fay, Patrick

Author_Institution

Ohio State Univ., Columbus

fYear

2007

fDate

18-20 June 2007

Firstpage

153

Lastpage

154

Abstract

We report the first directly-measured sensitivity performance of a zero-bias Si-based heterojunction backward detector, which is readily compatible with mainstream silicon technology. A measured sensitivity of 2376 V/W driven from a 50 Omega source at zero-bias has been obtained. A cutoff frequency of 1.8 GHz was extracted with a series resistance of 290 Omega and a junction capacitance of 0.307 pF using a small signal model established to fit the measured S-parameters for a 5 mum diameter mesa device.

Keywords

Ge-Si alloys; microwave detectors; microwave diodes; silicon; S-parameters; Si-SiGe; capacitance 0.307 pF; delta-doped zero-bias backward diodes; frequency 1.8 GHz; heterojunction backward detector; mesa device; microwave detection; resistance 290 ohm; resistance 50 ohm; silicon technology; size 5 mum; Capacitance measurement; Cutoff frequency; Detectors; Diodes; Electrical resistance measurement; Frequency measurement; Germanium silicon alloys; Heterojunctions; Scattering parameters; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373694

Filename

4373694