THz front-side illuminated quantum well photodetector

Author

Patrashin, Mikhail ; Hosako, Iwao

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Koganei

fYear

2007

fDate

18-20 June 2007

Firstpage

159

Lastpage

160

Abstract

We have designed a front-side illuminated GaAs/AlGaAs detector with a targeted peak frequency of 3 THz (100 mum) in an effort to extend the successful implementation of infrared QW arrays to the terahertz range. A simple multilayer structure has 18-nm GaAs QWs sandwiched between AlGaAs barriers with an Al alloy fraction of 2%. The effect of different barrier widths and doping concentrations on the expected dark current and spectral response of the structure were numerically simulated.

Keywords

III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; nanoelectronics; optical arrays; optical multilayers; photodetectors; quantum well devices; semiconductor doping; submillimetre wave devices; GaAs-AlGaAs; alloy fraction; barrier widths; doping concentrations; frequency 3 THz; front-side illuminated quantum well photodetector; infrared QW arrays; multilayer structure; size 18 nm; Aluminum alloys; Dark current; Doping; Frequency; Gallium arsenide; Infrared detectors; Nonhomogeneous media; Numerical simulation; Photodetectors; Sensor arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373697

Filename

4373697