Title :
Towards vertical III-V nanowire devices on silicon
Author :
Bakkers, Erik P.A.M. ; Borgström, Magnus T. ; Van den Einden, Wim ; Van Weert, Maarten ; Minot, Ethan D. ; Kelkensberg, Freek ; Van Kouwen, Maarten ; Van Dam, Jorden A. ; Kouwenhoven, Leo P. ; Zwiller, Valery ; Helman, Ana ; Wunnicke, Olaf ; Verheijen, Ma
Author_Institution :
Philips Res. Labs., Eindhoven
Abstract :
In this paper, we have grown III-V nanowires by metal organic vapor phase epitaxy (MOVPE) using the vapor-liquid-solid (VLS) growth mechanism. In addition, the author discusses the fabrication and characterization of reproducible axial InP nanowire LED devices.
Keywords :
III-V semiconductors; MOCVD; indium compounds; light emitting diodes; nanoelectronics; nanowires; semiconductor diodes; silicon; transistors; vapour phase epitaxial growth; InP; LED; MOVPE; Si; diodes; metal organic vapor phase epitaxy; transistor devices; vapor-liquid-solid growth mechanism; vertical III-V nanowire devices; Crystallization; Epitaxial growth; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Lattices; Nanoscale devices; Semiconductor device doping; Semiconductor impurities; Silicon;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373699
